Lebedev A. A.1, Kozlovski V. V. 1,2, Malevsky D. A.1, Sakharov A. V.1, Davydovskaya K. S.1, Levinshtein M. E.1, Nikolaev A. E. 1
1Ioffe Institute, St. Petersburg, Russia
2Peter the Great St. Petersburg Polytechnical University, St. Petersburg, Russia
Email: shura.lebe@mail.ioffe.ru
Fabrication of devices based on wide-band semiconductors is one of the most fast-growing modern electronics areas. The paper compares the effect of irradiation temperature on the radiation resistance of GaN exposed to proton and electron irradiation. Carrier removal rate was determined for GaN irradiated by protons and electrons at high temperatures. It is shown that, as in the case of SiC, the carrier removal rate decreases significantly at an irradiation temperature of 200 oC compare with irradiation at room temperature. Keywords: GaN, SiC, radiation resistance, irradiation temperature, protons, electrons.
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Дата начала обработки статистических данных - 27 января 2016 г.