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Structure and optical properties of a composite AsSb-Al_0.6Ga_0.4As_0.97Sb_0.03 metamaterial

DOI: 10.21883/SC.2023.01.55623.4545

Snigirev L. A. ¹, Ushanov V. I. ¹, Ivanov A. A. ¹, Bert N. A. ¹, Kirilenko D. A.¹, Yagovkina M. A. ¹, Preobrazhenskii V. V.², Putyato M. A. ², Semyagin B. R. ², Kasatkin I. A.³, Chaldyshev V. V.¹

¹Ioffe Institute, St. Petersburg, Russia
²Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
³St. Petersburg State University, St. Petersburg, Russia

Email: chald.gvg@mail.ioffe.ru

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Abstract
References
Статистика просмотров

Epitaxial layers of Al_xGa_1-xAs_1-ySb_y with an aluminum content x~60% and antimony content y~3% were successfully grown by molecular-beam epitaxy at low temperature. A developed system of AsSb nanoinclusions was formed in the semiconductor matrix by subsequent annealing. The extended transparency window of the obtained metamaterial allows us to document the absorption of light near the interband absorption edge of the Al_xGa_1-xAs_1-ySb_y semiconductor matrix. Parameters of the observed extinction band allow us to attribute the optical absorption to the plasmon resonance in the system of AsSb nanoinclusions. Keywords: molecular beam epitaxy, x-ray diffraction analysis, transmission electron microscopy, optical properties, plasmon resonance.

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