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PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
Поступила в редакцию: 24 ноября 2015 г.
Выставление онлайн: 20 декабря 2016 г.
The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO2 thin films were post deposited annealed in rapid thermal annealing chamber at temperature of 400oC. The atomic force microscopy and x-ray photoelectron spectroscopy has been carried out to study the surface topography and roughness and chemical composition of thin film respectively. DOI: 10.21883/FTP.2017.01.8125
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Дата начала обработки статистических данных - 27 января 2016 г.
