Zalessky V.G.1, Kaminski V.V.
1, Hirai S.2, Kubota Y.2, Sharenkova N.V.
1
1Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Muroran Institute of Technology, Muroran, Hokkaido, Japan
Email: Vladimir.Kaminski@mail.ioffe.ru, natasha.sharenkova@gmail.com
Выставление онлайн: 20 марта 2018 г.
The rare-earth semiconductor beta-Ce2S3 compound samples were synthesized and their dielectric permittivity and electrical conductivity were measured in the temperature range 90-400 K. The energy-band structure has been determined. It is shown that the long-known large electrical parameter spread of semiconductor compounds close in composition to Ce2S3 is explained by the structure of impurity donor levels formed by cerium atoms and ions with different ionization degrees.
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