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Investigation on high-kappa dielectric for low leakage AlGaN/GaN MIS-HEMT device, using material selection methodologies

Полная версия: 10.1134/S1063782618040073

Kumar Reddy Baikadi Pranay¹, Ravi Teja Karri Babu¹, Kandpal Kavindra¹

¹Department of Electrical & Electronics Engineering, Birla Institute of Technology and Science Pilani, Rajasthan, India Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani, Rajasthan, India

Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani, Rajasthan, India

Email: kavindra.kandpal@pilani.bits-pilani.ac.in

Выставление онлайн: 20 марта 2018 г.

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This paper analyzes various high-kappa dielectrics for low leakage AlGaN (Aluminium Gallium Nitride)/GaN (Gallium Nitride) MIS-HEMT (Metal Insulator Semiconductor - High Electron Mobility Transistor) device. The investigation is carried out by examining different attributes such as the dielectric constant, conduction band offset, and energy band gap of the dielectric which are crucial for a good dielectric-AlGaN interface. This work also computes the values of band offsets of different dielectrics to AlGaN analytically. The selection of the most promising dielectric is done using three different multi-criteria decision making methods (MCDM) namely the Ashby, VIKOR (VIseKriterijumska Optimizacija I Kompromisno Resenje in Serbian, meaning Multicriteria Optimization and Compromise Solution) and TOPSIS (Technique for Order Preference by Similarity to Ideal Solution). All the analyses point to La₂O₃ as the best gate dielectric for AlGaN/GaN MIS-HEMT device.

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