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Hybrid GaAs/AlGaAs nanowire --- quantum dot system for single photon sources

DOI: 10.21883/FTP.2018.04.45818.07

Переводная версия: 10.1134/S1063782618040103

Cirlin G.E.^1,2,3,4, Reznik R.R.^1,2,3,4, Shtrom I.V.^1,3, Khrebtov A.I.^1,2, Samsonenko Yu.B.^1,2,3, Kukushkin S.A.⁵, Kasama T.⁶, Akopian N.⁶

¹St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, Russia

St. Petersburg Academic University, St. Petersburg, Russia

²ITMO University, Saint-Petersburg, Russia

³Institute for Analytical Instrumentation RAS, St. Petersburg, Russia

Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, Russia

⁴Peter the Great St. Petersburg Polytechnic University (SPbPU), St. Petersburg, Russia Peter the Great St.Petersburg Polytechnic University (SPbPU), St. Petersburg, Russia

⁵Institute of Problems of Mechanical Engineering Russian Academy of Science, St. Petersburg, Russia

⁶DTU Photonics,Technical University of Denmark, Kgs. Lyngby, Denmark DTU Photonics, Technical University of Denmark, Denmark, Germany

Email: cirlin@beam.ioffe.ru

Выставление онлайн: 20 марта 2018 г.

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III-V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology. Acknowledgements We are grateful for the support of the Ministry of education and science of Russian Federation (state task, project No 16.2483.2017/4.6). The nanowire samples were grown under the support of Russian Science Foundation (Project No 14-12-00393).

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Дата начала обработки статистических данных - 27 января 2016 г.

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