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Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential

DOI: 10.21883/FTP.2018.04.45824.13

Переводная версия: 10.1134/S1063782618040231

Russian Foundation for Basic Research, mol_a, 16-32-00560

Council for grants of the Russian Federation President, MK-3632.2017.2

Council for grants of the Russian Federation President, МК-6492.2018.2

Ministry of Education and Science of the Russian Federation, Leading universities of the Russian Federation, 074- U01

Ministry of Education and Science of the Russian Federation, 16.2593.2017/4.6

Ministry of Education and Science of the Russian Federation, 16.2593.2017/8.9

Mozharov A.M.

¹, Vasiliev A.A.¹, Bolshakov A.D.

¹, Sapunov G.A.¹, Fedorov V.V.¹, Cirlin G.E.^1,2,3, Mukhin I.S.^1,2

¹St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, Russia

St. Petersburg Academic University, St. Petersburg, Russia

²ITMO University, Saint-Petersburg, Russia

³Institute for Analytical Instrumentation RAS, St. Petersburg, Russia

Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, Russia

Email: mozharov@spbau.ru, ftf.vasiliev@yandex.ru, acr1235@mail.ru, sapunovgeorgiy@gmail.com, imukhin@spbau.ru

Выставление онлайн: 20 марта 2018 г.

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In this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.

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Дата начала обработки статистических данных - 27 января 2016 г.

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