Herein, we have measured the mobility of Hole's for the configuration FT0/TiO₂/CH₃NH₃PbBr₃/PCBM/Al by the SCLC regime. The current-voltage (I-V) characteristics of the CH₃NH₃PbBr₃ perovskite based device shows the rectifying behavior as Schottky diode. Different parameters of the proposed device such as saturation current, ideality factor, barrier height have been taken out from I-V characteristics. The highest Hole's mobility from Ti0₂ thin film through the perovskite and PEDOT:PSS film to the top aluminum electrode has of order 1.59·10^-4 cm²V^-1s^-1. Moreover, the proposed device shows the TFSCLC regime at lower voltage while, at higher voltages it shows the TCLC regime. In addition to this, some important parameters like junction resistance, capacitance and carrier lifetime of device can be measured by the spectroscopy analysis of impedance.

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.