Физика и техника полупроводников

Авторам

Правила оформления публикаций

Вышедшие номера

2024
- 1 2 3 4 5 6 7
2023
- 1 2 3 4 5 6 7 8 9
2022
- 1 2 3 4 5 6 7 8 9 10 11 12
2021
- 1 2 3 4 5 6 7 8 9 10 11 12
2020
- 1 2 3 4 5 6 7 8 9 10 11 12
2019
- 1 2 3 4 5 6 7 8 9 10 11 12
2018
- 1 2 3 4 5 6 7 8 9 10 11 12 13
2017
- 1 2 3 4 5 6 7 8 9 10 11 12
2016
- 1 2 3 4 5 6 7 8 9 10 11 12
2015
- 1 2 3 4 5 6 7 8 9 10 11 12
2014
- 1 2 3 4 5 6 7 8 9 10 11 12
2013
- 1 2 3 4 5 6 7 8 9 10 11 12
2012
- 1 2 3 4 5 6 7 8 9 10 11 12
2011
- 1 2 3 4 5 6 7 8 9 10 11 12
2010
- 1 2 3 4 5 6 7 8 9 10 11 12
2009
- 1 2 3 4 5 6 7 8 9 10 11 12
2008
- 1 2 3 4 5 6 7 8 9 10 11 12
2007
- 1 2 3 4 5 6 7 8 9 10 11 12
2006
- 1 2 3 4 5 6 7 8 9 10 11 12
2005
- 1 2 3 4 5 6 7 8 9 10 11 12
2004
- 1 2 3 4 5 6 7 8 9 10 11 12
2003
- 1 2 3 4 5 6 7 8 9 10 11 12
2002
- 1 2 3 4 5 6 7 8 9 10 11 12
2001
- 1 2 3 4 5 6 7 8 9 10 11 12
2000
- 1 2 3 4 5 6 7 8 9 10 11 12
1999
- 1 2 3 4 5 6 7 8 9 10 11 12
1998
- 1 2 3 4 5 6 7 8 9 10 11 12
1997
- 1 2 3 4 5 6 7 8 9 10 11 12
1996
- 1 2 3 4 5 6 7 8 9 10 11 12
1995
- 1 2 3 4 5 6 7 8 9 10 11 12
1994
- 1 2 3 4 5 6 7 8 9 10 11 12
1993
- 1 2 3 4 5 6 7 8 9 10 11 12
1992
- 1 2 3 4 5 6 7 8 9 10 11 12
1991
- 1 2 3 4 5 6 7 8 9 10 11 12
1990
- 1 2 3 4 5 6 7 8 9 10 11 12
1989
- 1 2 3 4 5 6 7 8 9 10 11 12
1988
- 1 2 3 4 5 6 7 8 9 10 11 12

Material-induced shunts in multicrystalline silicon solar cells

Breitenstein O.¹, Bauer J.¹, Rakotoniaina J.P.¹

¹Max Planck Institute of Microstructure Physics, Weinberg 2, Halle, Germany

Поступила в редакцию: 12 сентября 2006 г.

Выставление онлайн: 19 марта 2007 г.

PDF версия

Абстракт
Литература
Статистика просмотров

By applying lock-in thermography imaging, light-beam induced current imaging, electron-beam induced current imaging at different stages of sample preparation, and infrared light microscopy in transmission mode, the physical nature of the dominant material-induced shunts in multicrystalline solar cells made from p-type silicon material has been investigated. It turns out that these shunts are due to silicon carbide (SiC) filaments, which are growing preferentially in grain boundaries and are crossing the whole cell. These filaments are highly n-type doped, like the emitter layer at the surface of the cells. They are electrically connected both with the emitter and with the back contact, thereby producing internal shunts in the solar cell. PACS: 84.60.Jt, 87.63.Hg, 87.64.Ee, 87.64.Rr

A. Kaminski, O. Breitenstein, J.P. Boyeaux, J.P. Rakotoniaina, A. Laugier. J. Phys.: Condens. Matter, 16, 9 (2004)
S. Huth, O. Breitenstein, A. Huber, D. Dantz, U. Lambert, F. Altmann. Sol. St. Phenomena, 82--84, 741 (2002)
O. Breitenstein, M. Langenkamp. Lock-in Thermography --- Basics and Applications to Functional Diagnostics of Electronic Components (Springer, Heidelberg--Berlin, 2003) ISBN 3-540-43439-9
O. Breitenstein, J.P. Rakotoniaina, M.H. Al Rifai, M. Werner. Progr. Photovolt. Res. Appl., 12, 529 (2004)
J. Marek. J. Appl. Phys., 55, 1621 (1984)
SEM Microcharacterization of Semiconductors, ed by D.B. Holt, D.C. Joy (AP, London, 1989)
J.P. Rakotoniaina, S. Neve, M. Werner, O. Breitenstein. Proc. PV in Europe: From PV Technology to Energy Solutions. Conference and Exhibition (Rome, 2002) p. 24
J. Bauer. Diploma Thesis (2006) at Martin-Luther-University Halle, Germany (in German). To be published at EDS conference 2006 (Halle, Germany)
A. Grohe, U. Zastrow, D. Meertens, L. Houben, W. Brendle, G. Bilger, E. Schneiderlochler, S.W. Glunz, R. Preu, G.P. Willeke. Proc. 20th Eur. Photovoltaic Solar Energy Conf. (Barcelona, 2005) p. 1158

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Учредители

Издатель