Main luminescence bands in silica SiO₂ are the red luminescence R (650 nm, 1.9 eV) of the non-bridging oxygen hole center, the blue band B (460 nm, 2.7 eV) and the altraviolet luminescence UV (290 nm, 4.3 eV) both related commonly to oxygen deficient centers. In the present work we will enhance or replace either the first or second constituent of SiO₂, i. e. silicon or oxygen, isoelectronically by additional implantation of respective ions. Thus thermally oxidized SiO₂ layers have been implanted by different ions of the IV group (C, Si, Ge, Sn, Pb) and of the VI group (O, S, Se) with doses up to 5·10¹⁶ cm^-2 leading to an atomic dopant fraction of about 4 at% at the half depth of the SiO₂ layers. Very surprisingly, the cathodoluminescence spectra of oxygen and sulfur implanted SiO₂ layers show besides characteristic bands a sharp and intensive multimodal structure beginning it the green region at 500 nm up to the near infrared. The energy step differences of the sublevels amount in average 120 meV and indicate vibration associated electronic states, probably of O₂^- interstitial molecules. PACS: 78.60.Hk, 61.72.Ww

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