Effect of pressure and temperature on electronic structure of GaN in the zinc-blende structure
Degheidy A.R.1, Elkenany E.B.1
1Department of Physics, Faculty of Science, Mansoura University, Mansoura, Egypt
Поступила в редакцию: 12 января 2011 г.
Выставление онлайн: 19 сентября 2011 г.
The effect of the hydrostatic pressure and the temperature on the electronic structure in GaN semiconductor has been calculated using the local empirical pseudopotential method. The variation of the direct and indirect energy gaps with the pressure up to 120 kbar and with the temperature up to 500 K has been done. The calculated fundamental energy gap at different pressures and different temperatures are calculated and compared with the available experimental data which show excellent agreement. The effect of pressure and temperature on the refractive index of the considered materials has also been studied.
- T.V. Gorkavenko, S.M. Zubkova, and L.N. Rusina, Semiconductors. 41 (2007) 641--650
- H. Morkoc, S.N. Mohammad. Science, 267, 51 (1995)
- J.W. Orton, C.T. Foxon, Rep. Progr. Phys., 61, 1 (1998)
- S.C. Jain, M. Willander, J. Narayan, R. Van Overstraeten. J. Appl. Phys., 87 965 (2000)
- D. Vogel, P. Kruger, J. Pollmann, Phys. Rev. B, 55, 12 836 (1997)
- T. Lei, T.D. Moustakas, R.J. Graham, Y. He, S.J. Berkowitz, J. Appl. Phys., 71, 4933 (1992)
- TakaHiro Maruyama, Yutaka Miyajima, Kazutaka Hata, Sung Hwan Cho, Katsuhiro Akimoto, Hajime Okumura, sadafumi Yushida, and Hiroo Kato, J. Electronic Materials. 27 (1998) 4
- V.N. Brudnyi, A.V. Kosobutsky, and N.G. Kolin, Semiconductors. 43 (2009) 1271--1279
- L. Wenchang, Z. Kaiming, and Xie Xide, J. Phys.: Condens. Matter 5 (1993) 875
- Masakatsu Suzuki, and Takeshi Uenoyama, J. Appl. Phys. 34 (1995) 3442--3446
- J.C. Philips, L. Klienman, Phys. Rev., 116, 287 (1959)
- M.H. Cohen, V. Heine, Phys. Rev., 122, 1821 (1961)
- B.J. Austin, V. Heine, L.J. Sham. Phys. Rev., 127, 276 (1962)
- M.L. Cohen, T.K. Bergstresser. Phys. Rev., 141 780 (1966)
- J.C. Phillips, K.C. Pandey. Phys. Rev. Lett., 30, 787 (1976)
- K.C. Pandey, J.C. Phillips. Phys. Rev. B, 9, 1552 (1974)
- J.R. CHelikowsky, M.L. Cohen. Phys. Rev. B, 14, 556 (1976); Phys. Rev. Lett., 31 (1973)
- R. Chelikowsky, M.L. Cohen. Phys. Rev. Lett., 32, 674 (1974)
- W. Potz, P. Volg. Phys. Rev. B, 24, 2025 (1981)
- G. Theurich, N.A. Hill. Phys. Rev. B, 64, 73 106 (2001)
- A.M. Elabsy, E.B. Elkenany. Physica. B 405 (2010) 266
- A. Gilat. MATLAM An Introduction with Application (J. Wilely \& Sons Inc., 2005)
- P. Harrison. Quantum Wells Wires and Quantum Dots (J, Wiley \& Sons Ltd., 2005), 2nd ed., Chap. 11
- V.P. Gupta, N.M. Ravindra. Phys. Status Solidi B, 100, 715 (1980)
- N.M. Ravindra, S. Auluck, V.K. Srivastava. Phys. Status Solidi B, 93, k155 (1979)
- P.J.L. Herve, L.K.J. Vandamme. Infr. Phys. Technol., 35 609 (1994)
- S. Adachi. Properties of Group IV, III--V and II--VI Semiconductors. Wiley, N.Y., (2005) chap. 2
- Y.P. Varshni. Physica, 34 149 (1967)
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