Физика и техника полупроводников

Авторам

Правила оформления публикаций

Вышедшие номера

2024
- 1 2 3 4 5 6 7
2023
- 1 2 3 4 5 6 7 8 9
2022
- 1 2 3 4 5 6 7 8 9 10 11 12
2021
- 1 2 3 4 5 6 7 8 9 10 11 12
2020
- 1 2 3 4 5 6 7 8 9 10 11 12
2019
- 1 2 3 4 5 6 7 8 9 10 11 12
2018
- 1 2 3 4 5 6 7 8 9 10 11 12 13
2017
- 1 2 3 4 5 6 7 8 9 10 11 12
2016
- 1 2 3 4 5 6 7 8 9 10 11 12
2015
- 1 2 3 4 5 6 7 8 9 10 11 12
2014
- 1 2 3 4 5 6 7 8 9 10 11 12
2013
- 1 2 3 4 5 6 7 8 9 10 11 12
2012
- 1 2 3 4 5 6 7 8 9 10 11 12
2011
- 1 2 3 4 5 6 7 8 9 10 11 12
2010
- 1 2 3 4 5 6 7 8 9 10 11 12
2009
- 1 2 3 4 5 6 7 8 9 10 11 12
2008
- 1 2 3 4 5 6 7 8 9 10 11 12
2007
- 1 2 3 4 5 6 7 8 9 10 11 12
2006
- 1 2 3 4 5 6 7 8 9 10 11 12
2005
- 1 2 3 4 5 6 7 8 9 10 11 12
2004
- 1 2 3 4 5 6 7 8 9 10 11 12
2003
- 1 2 3 4 5 6 7 8 9 10 11 12
2002
- 1 2 3 4 5 6 7 8 9 10 11 12
2001
- 1 2 3 4 5 6 7 8 9 10 11 12
2000
- 1 2 3 4 5 6 7 8 9 10 11 12
1999
- 1 2 3 4 5 6 7 8 9 10 11 12
1998
- 1 2 3 4 5 6 7 8 9 10 11 12
1997
- 1 2 3 4 5 6 7 8 9 10 11 12
1996
- 1 2 3 4 5 6 7 8 9 10 11 12
1995
- 1 2 3 4 5 6 7 8 9 10 11 12
1994
- 1 2 3 4 5 6 7 8 9 10 11 12
1993
- 1 2 3 4 5 6 7 8 9 10 11 12
1992
- 1 2 3 4 5 6 7 8 9 10 11 12
1991
- 1 2 3 4 5 6 7 8 9 10 11 12
1990
- 1 2 3 4 5 6 7 8 9 10 11 12
1989
- 1 2 3 4 5 6 7 8 9 10 11 12
1988
- 1 2 3 4 5 6 7 8 9 10 11 12

Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 mum

Ben Nasr A.¹, Habchi M.M.¹, Bilel C.¹, Rebey A.¹, El Jani B.¹

¹University of Monastir, Faculty of Sciences, Unite de Recherche sur les Hetero-Epitaxies et Applications, Monastir, Tunisia

Поступила в редакцию: 19 августа 2013 г.

Выставление онлайн: 19 апреля 2015 г.

PDF версия

Абстракт
Литература
Статистика просмотров

Band structures of GaN_0.58yAs_1-1.58yBi_y/GaAs quantum wells (QWs) were studied using the band anticrossing model and the envelope function approximation. The confined states energies and the oscillator strengths of interband transitions were determined for well widths L_W and Bi composition y varying in the range of 4-10 nm and 0-0.07 respectively. The emissions 1.3 and 1.55 mum were reached for specific couples (L_W, y). The band anticrossing effect on the in-plane carriers effective mass has been investigated at k=0. The absorbance spectra were calculated for QWs operating at 1.3 and 1.55 mum.

K. Alberi, J. Wu, W. Walukiewicz, K.M. Yu, O.D. Dubon, S.P. Watkins, C.X. Wang, X. Liu, Y.-J. Cho, J. Furdyna. Phys. Rev. B, 75, 045 203 (2007)
W. Shan, K.M. Yu, W. Walukiewicz, J. Wu, J.W. Ager III, E.E. Haller. J. Phys. Condens. Matter, 16, S3355 (2004)
Y.N. Qiu, J.M. Rorison. Appl. Phys. Lett., 87, 081 111 (2005).
J-Y. Duboz. Phys. Rev. B, 75, 045 327 (2007)
S. Nacer, A. Aissat, K. Ferdjani. Optical Quant. Electron., 40, 677 (2008)
P. Wei, S. Tixier, M. Chicoine, S. Francoeur, A. Mascarenhas, T. Tiedje, F. Schiettekatte. Nucl. Instrum. Meth. Phys. Res. B, 219, 671 (2004)
A. Janotti, S.-H. Wei, S.B. Zhang. Phys. Rev. B, 65, 115 203 (2002)
E.C. Young. (Ph.D. Thesis, University of British Columbia, 2006)
W. Huang, K. Oe, G. Feng, M. Yoshimoto. J. Appl. Phys., 98, 053 505 (2005)
C. Skierbiszewski, S.P. Lepkowski. P. Perlin, T. Suski, W. Jantsch, J. Geisz. Physica E, 13, 1078 (2002)
J. Wu, W. Shan, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H.P. Xin, C.W. Tu. Phys. Rev. B, 64, 085 320 (2001)
H. Dumant, L. Auvray, Y. Monteil, F. Saidi, F. Hassen, H. Maaref. Optical Mater. 24, 303 (2003)
S. Imhof, C. Buckers, A. Thranhardt, J. Hader, J.V. Moloney, S.W. Koch. Semicond. Sci. Technol., 23, 125 009 (2008)
Y.I. Mazur, V.G. Dorogan, M. Schmidbauer, G.G. Tarasov, S.R. Johnson, X. Lu, S-Q. Yu, Z.M. Wang, T. Tiedje, G.J. Salamo. Nanotechnology, 22, 375 703 (2011)
J. Hwang, J.D. Phillips. Phys. Rev. B, 83, 195 327 (2011)
J.C. Harmand, G. Ungaro, J. Ramos, E.V.K. Rao, G. Saint-Girons, R. Teissier, G. Le Roux, L. Largeau, G. Patriarche. J. Cryst. Growth, 227, 553 (2001)
M.M. Habchi, A. Ben Nasr, A. Rebey, B. El Jani, Infrared Physics \& Technology 61, 88 (2013)
A.T. Meney, B. Gonul, E.P. O'Reilly. Phys. Rev. B, 50, 10 893 (1994)
J. Wu, W. Shan, W. Walukiewicz. Semicond. Sci. Technol., 17, 860 (2002)
G. Bastard. Wave mechanics applied to semiconductor heterostructures (Les Editions de Physique, Les Ulis Cedex, France, 1990)
D. Ahn, S.L. Chuang, Y.-C. Chang. J. Appl. Phys., 64, 4056 (1988)
R. Kudrawiec, K. Ryczko, J. Misiewicz, H.B. Yuen, S.R. Bank, M.A. Wistey, H.P. Bae, J.S. Harris. Appl. Phys. Lett., 86, 141 908 (2005)
H.B. Yuen, S.R. Bank, H. Bae, A.M. Wistey, J.S. Harris. J. App. Phys., 99, 093 504 (2006)
S.C.P. Rodrigues, G.M. Sipahi, E.F. da Silva, jr. Microelectron. J., 36, 434 (2005)
B. Fluegel, S. Francoeur, A. Mascarenhas. Phys. Rev. Lett., 97, 067 205 (2006)
S. Tomic, E.P. O'Reilly, R. Fehse, S.J. Sweeney, A.R. Adams, A.D. Andreev, S.A. Choulis, T.J.C. Hosea, H. Riechert. J. Selected Topics Quant. Electron., 9, 1228 (2003)
A. Lucio Claudio, P. Alfredo, B. Franco. Phys. Rev. B, 36, 5887 (1987)
S. Tomic, E.P. O'Reilly, P.J. Klar, H. Gruning, W. Heimbrodt, W.M. Chen, I.A. Buyanova. Phys. Rev. B, 69, 245 305 (2004)
S. Tomic, E.P. O'Reilly. Phys. Rev. B, 71, 233 301 (2005)
H. Fang, H.A. Bechtel, E. Plis, M.C. Martin, S. Krishna, E. Yablonovitch, A. Javey, P. Natl. Acad. Sci. USA. 110, 11688 (2013)
S. Kasap, P. Capper (Eds.), Springer Handbook of Electronic and Photonic Materials (Springer, 2006), 1026-1029, e-ISBN: 0-387-29185-7
P.K. Basu, Theory of Optical Process in Semiconductors Bulk and Microstructures, (Clarendon Press, Oxford, 1997).

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Учредители

Издатель