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Silicon nanowire array architecture for heterojunction electronics
Поступила в редакцию: 20 сентября 2016 г.
Выставление онлайн: 20 марта 2017 г.
Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nanostructured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc=0.8 V, short-circuit current Isc=3.72 mA/cm2 and fill factor FF=0.5 under illumination of 100 mW/сm2. DOI: 10.21883/FTP.2017.04.44354.8407
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Дата начала обработки статистических данных - 27 января 2016 г.
