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TCAD Simulation Study of Single, Double, and Triple Material Gate Engineered Trigate FinFETs
Полная версия: 10.1134/S1063782620040211 
1Department of Electronics and Communication Engineering, Dayananda Sagar College of Engineering, Bangalore, India 
2Department of Electronics and Communication Engineering, National Engineering College, Kovilpatti, Tamilnadu, India
2Department of Electronics and Communication Engineering, National Engineering College, Kovilpatti, Tamilnadu, India
Email: ervimala@gmail.com
Поступила в редакцию: 17 октября 2019 г.
Выставление онлайн: 20 марта 2020 г.
A detailed comparative performance analysis of the Trigate Fin Field Effect Transistor (FinFET) device with different structures such as Single-Material Gate (SMG) FinFET, Double-Material Gate (DMG) FinFET, and Triple-Material Gate (TMG) FinFET has been done. Silvaco Atlas Technology Computer Aided Design (TCAD) tool is used to model the Trigate FinFET device structures and to characterize all the electrical parameters of the device. The simulation results confirm that TMG FinFET device structure shows better performance than SMG and DMG FinFET device structures, in terms of device electrical parameters such as surface potential, electric field, and drain current. Moreover, TMG FinFET device structure exhibits an excellent transconductance of 0.28 μA/V when compared with SMG FinFET (0.21 μA/V) and DMG FinFET (0.24 μA/V). Keywords: TCAD, Trigate FinFET, drain current, transconductance, output conductance.
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Дата начала обработки статистических данных - 27 января 2016 г.
