Физика и техника полупроводников

Авторам

Правила оформления публикаций

Вышедшие номера

2024
- 1 2 3 4 5 6 7 8 9 10
2023
- 1 2 3 4 5 6 7 8 9
2022
- 1 2 3 4 5 6 7 8 9 10 11 12
2021
- 1 2 3 4 5 6 7 8 9 10 11 12
2020
- 1 2 3 4 5 6 7 8 9 10 11 12
2019
- 1 2 3 4 5 6 7 8 9 10 11 12
2018
- 1 2 3 4 5 6 7 8 9 10 11 12 13
2017
- 1 2 3 4 5 6 7 8 9 10 11 12
2016
- 1 2 3 4 5 6 7 8 9 10 11 12
2015
- 1 2 3 4 5 6 7 8 9 10 11 12
2014
- 1 2 3 4 5 6 7 8 9 10 11 12
2013
- 1 2 3 4 5 6 7 8 9 10 11 12
2012
- 1 2 3 4 5 6 7 8 9 10 11 12
2011
- 1 2 3 4 5 6 7 8 9 10 11 12
2010
- 1 2 3 4 5 6 7 8 9 10 11 12
2009
- 1 2 3 4 5 6 7 8 9 10 11 12
2008
- 1 2 3 4 5 6 7 8 9 10 11 12
2007
- 1 2 3 4 5 6 7 8 9 10 11 12
2006
- 1 2 3 4 5 6 7 8 9 10 11 12
2005
- 1 2 3 4 5 6 7 8 9 10 11 12
2004
- 1 2 3 4 5 6 7 8 9 10 11 12
2003
- 1 2 3 4 5 6 7 8 9 10 11 12
2002
- 1 2 3 4 5 6 7 8 9 10 11 12
2001
- 1 2 3 4 5 6 7 8 9 10 11 12
2000
- 1 2 3 4 5 6 7 8 9 10 11 12
1999
- 1 2 3 4 5 6 7 8 9 10 11 12
1998
- 1 2 3 4 5 6 7 8 9 10 11 12
1997
- 1 2 3 4 5 6 7 8 9 10 11 12
1996
- 1 2 3 4 5 6 7 8 9 10 11 12
1995
- 1 2 3 4 5 6 7 8 9 10 11 12
1994
- 1 2 3 4 5 6 7 8 9 10 11 12
1993
- 1 2 3 4 5 6 7 8 9 10 11 12
1992
- 1 2 3 4 5 6 7 8 9 10 11 12
1991
- 1 2 3 4 5 6 7 8 9 10 11 12
1990
- 1 2 3 4 5 6 7 8 9 10 11 12
1989
- 1 2 3 4 5 6 7 8 9 10 11 12
1988
- 1 2 3 4 5 6 7 8 9 10 11 12

Effect of Annealing on the Dark and Illuminated I(V) Characterization of a Zno : Ga|Cu₂O Hetero-junction Prepared by Ultrasonic Spray System

Полная версия: 10.1134/S1063782620050164

Trir H.¹, Radjhi L.², Sengouga N.¹, Tibermacine T.¹, Arab L.¹, Filali W.³, Abdelkader D.², Attaf N.⁴

¹Laboratoire des Materiaux Semiconducteurs et Metalliques, Universite Mohammed Khider, Biskra, Algeria Laboratoire des Matériaux Semiconducteurs et Métalliques, Université Mohammed Khider, Biskra, Algeria

Laboratoire des Matériaux Semiconducteurs et Métalliques, Université Mohammed Khider, Biskra, Algeria

².Laboratoire des Structures, Proprietes et Interactions Inter Atomiques (LASPI2A), Khenchela University, Algeria

Laboratoire des Structures, Propriétés et Interactions Inter Atomiques (LASPI2A), Abbes Laghrour University, Khenchela, Algeria

³Centre de Developpement des Technologies Avancees (CDTA), Algiers, Algeria Centre de Développement des Technologies Avancées (CDTA), Algiers, Algeria

Centre de Développement des Technologies Avancées (CDTA), Algiers, Algeria

⁴Laboratoire couches minces et interfaces, D?partement de Physique, Faculte de Sciences exactes, Universite de Freres Mentouri, Constantine1, Algeria

Laboratoire couches minces et interfaces, Département de Physique, Faculté de Sciences exactes, Université de Fréres Mentouri, Constantine1, Algeria

Email: n.sengouga@univ-biskra.dz

Поступила в редакцию: 2 декабря 2019 г.

Выставление онлайн: 26 марта 2020 г.

PDF версия

Абстракт
Статистика просмотров

This paper presents the Ultrasonic Spray Pyrolysis system fabrication of gallium-doped Zinc Oxide (ZnO : Ga)|Cuprous Oxide (Cu₂O) thin film hetero-junction. The deposition parameters were constant for ZnO : Ga and Cu₂O. Structural and optical properties of ZnO : Ga, Cu₂O and ZnO : Ga|Cu₂O hetero-junction were characterized by X-Ray Diffraction method and UV-Vis Spectrometry, respectively. SEM and FTIR were used to reveal the morphology and the nature of the chemical bonds. The electrical properties were measured by an Agilent I-V source meter. The ZnO : Ga|Cu₂O hetero-junction was annealed at 350, 400, and 450^oC and the current-voltage characteristics were measured. The band gaps of ZnO, Cu2O, and ZnO : Ga|Cu₂O are ~3.27 eV, ~2.65 eV, and ~3.29 eV, respectively. The annealing temperature improves the hetero-junction quality. Keywords: ZnO : Ga|Cu₂O hetero-junction, ultrasonic spray pyrolysis, electrical properties, annealing.

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Учредители

Издатель