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Effects of 1-MeV Electron Irradiation on the Photoluminescence of GaInNAs|GaAs Single Quantum Well Structure

Полная версия: 10.1134/S1063782620050103

Sailai M.¹, Aierken A.¹, Qiqi L.¹, Heini M.¹, Zhao X.¹, Mo J.², Jie Guo², Hao R.², Yu Z.², Qi G.¹

¹Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi,, P. R. China

Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. and Chem., Chinese Academy of Sciences, Urumqi, China

²School of Energy and Environment, Yunnan Normal University, No. 768 Juxian Road, Chenggong District, Kunming,, P. R. China

School of Energy and Environment, Yunnan Normal University, Chenggong District, Kunming, China

Email: erkin@ms.xjb.ac.cn

Поступила в редакцию: 6 декабря 2019 г.

Выставление онлайн: 26 марта 2020 г.

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Minimizing the impact of radiation-induced degradation in dilute nitride based optoelectronic devices is crucial in its applications. The effects of 1-MeV electron irradiation (of 1·10¹⁴-1·10¹⁶ e/cm² range) on undoped GaInNAs|GaAs single quantum-well (QW) structure has been studied by low-temperature photoluminescence (PL). PL spectra of GaInNAs|GaAs QW are measured before and after electron irradiation. The results show a slight enhancement of the PL intensity in relatively low electron fluence, and then subsequent deterioration of PL with the increase of cumulative electron fluences. The enhancement in PL intensity at low electron doses is explained by recombination-enhanced defect reaction model, and the degradation at high electron doses is explained by irradiation-induced defects in the lattice. Keywords: dilute nitride, quantum well, electron irradiation, PL, defect.

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Дата начала обработки статистических данных - 27 января 2016 г.

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