In this paper, the electrical properties of a double-gate dual-active-layer (DG-DAL) thin-film transistor (TFT) is investigated. To increase the ON-current and pixel intensity, and control the voltage stress bias, the conventional gate oxide material (silicon dioxide SiO₂) is replaced with a tri-high-k gate dielectric layer, hafnium dioxide HfO₂/lanthanum oxide La₂O₃/hafnium dioxide HfO₂ (HLH). Further, the performance of the proposed DG-DAL structure is compared with the single-active-layer (SAL) and dual-active-layer (DAL) TFTs. The amorphous indium-gallium zinc-oxide (a-IGZO) is considered as active layer for SAL channel region, and on the other hand, a-IGZO and indium-tin-oxide (ITO) are considered as active layers for DAL TFT and DG-DAL TFT channel regions. The parameters such as OFF-current, ON-current, I_ON/I_OFF ratio, threshold voltage, mobility, average subthreshold swing, etc. are evaluated for the considered structures. It is observed that the DG-DAL TFT with HLH dielectric offers high ON-current of 3.85·10^-3 A/μm, very low OFF-current of 2.53·10^-17 A/μm, very high I_ON/I_OFF ratio of 1.51·10¹⁴, the threshold voltage of 0.642 V, high mobility of 35 cm²·v^-1·s^-1 and average subthreshold swing of 127.84 mV/dec. A commercial TCAD simulation tool ATLAS from Silvaco^TM is used to investigate all the parameters for considered structures. Keywords: single active layer (SAL), dual active layer (DAL), double-gate dual active layer (DG-DAL), InGaZnO (IGZO), InSnO (ITO), thin-film transistor (TFT), HfO₂/La₂O₃/HfO₂ (HLH).

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Дата начала обработки статистических данных - 27 января 2016 г.