The core-level and valence band electronic structure of the n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy after irradiation by an Ar⁺ ion beam with energy E_i=1500 eV and fluence Q=1·10¹⁵ ions/cm². Conversion of the conductivity type of the surface layer and formation of a p-n structure have been observed. The p-surface layer thickness (d~5.0 nm) and band structure were experimentally determined from the Ga3d photoelectron spectrum by separation and analysis of the low intense n-type bulk contribution from deeper layers. A band diagram of the p-n junction formed on the n-GaAs-surface by Ar⁺ ion bombardment was reconstructed. The p-n junction proved to be unexpectedly narrow compared to the extended tail of the implanted ion depth distribution. Keywords: GaAs, p-n junction, band structure, ion irradiation, Ar⁺ ion beam.

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