In this paper, we give a systematical description of Ni|6H-SiC Schottky diode by current-voltage I(V) characteristics at room temperature and capacitance-voltage C(V) characteristics at various frequencies (10-800 kHz) and various temperatures (77-350^oK). The I(V) characteristics show a double-barrier phenomenon, which gives a low and high barrier height (phi^L_bn=0.91 eV, phi^H_bn=1.55 eV), with a difference of Deltaphi_bn=0.64 eV. Also, low ideality factor n^L=1.94 and high ideality factor n^H=1.22 are obtained. The C-V-T measurements show that the barrier height phi_bn decreases with decreasing of temperature and gives a temperature coefficient alpha=1.0·10^-3 eV/K and phi_bn(T=0 K)=1.32 eV. Deep-level transient spectroscopy (DLTS) has been used to investigate deep levels in the Ni|6H-SiC Schottky diode. The traps signatures such as activation energies E_a=0.50±0.07 eV, capture cross-section sigma=1.8·10^-20 cm², and defect concentration N_T=6.2·10¹³ cm^-3 were calculated from Arrhenius plots. Keywords: si1licon carbide, Schottky diodes, I-V, C-V-T, deep-level transient spectroscopy (DLTS).

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Дата начала обработки статистических данных - 27 января 2016 г.