Molybdenum disulphide (MoS₂) has gained tremendous attention due to its tunable semiconducting properties and versatile applications in future electronic and optoelectronic devices. Here, MoS₂ thin films were grown by adopting rapid thermal process. The process parameters like time and temperature have been systematically varied to modulate the morphological, microstructural, and electronic properties of MoS₂ thin films. A uniform morphology has been observed from FESEM images. The microstructural study was further carried out using XRD pattern and Raman spectra. The intensity of (002) XRD characteristic peak at 2theta=14.1^o is found to be increased, whereas the FWHM values are reduced with the growth time and process temperature. The improvement of crystallinity of the MoS₂ thin films with growth temperature is attributed to the decrease in the FWHM values of the characteristic Raman peaks, E¹_2g and A_1g. The dependence of hetero-junction characteristics such as ideality factor eta, built-in voltage V_bi, and carrier concentration on the growth parameters was evaluated using current-voltage and capacitance-voltage measurements. The films grown at 900^oC for 5 min. have possessed carrier concentration of 5.21·10¹⁶ cm^-3, with 0.55 V as V_bi, and eta is found to be 2.04 for MoS₂|Si hetero-junction. The decrease in the carrier concentration, eta, and V_bi in MoS₂|Si hetero-junction with the increase in the growth temperature has been ascribed to the reduction in the defect states due to enhancement in the sulfurization. Keywords: molybdenum disulphide, rapid thermal processing, sulfurization, hetero-junction.

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Дата начала обработки статистических данных - 27 января 2016 г.