The aim of this work was to investigate the effect of the ultra-thin GaN interlayer on the electrical and photoelectrical parameters of Au|GaAs Schottky barrier diodes. An optimized fabrication process was employed to elaborate two types of Schottky diodes Au|GaAs and Au|GaN|GaAs with a GaN thickness of 2.2 nm. Electrical parameters were extracted from current-voltage measurements in dark and under illumination with a green laser of 532-nm wavelength. Surface photovoltage (SPV) method was employed to estimate the excess of concentration and the mean interface state density. The extracted parameters from the current-voltage measurements in the dark, under illumination, and using SPV method show an improvement after nitridation process. The creation of the ultra-thin GaN layer at the Au|GaAs interface reduces the density of the interface states leading to the improvement of the electrical quality by restructuring the metal-semiconductor interface under the effect of formation of the GaN interfacial layer. This restructuration of the metal-semiconductor interface results in the improvement of the photoelectrical response of these structures by allowing the creation of an additional excess of concentration. Keywords: nitridation, SBDs, GaAs, SPV, characterization.

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Дата начала обработки статистических данных - 27 января 2016 г.