InP/GaAsSb type-II DHBTs with GaAsSb/InGaAs superlattice-base and GaAsSb bulk-base structures
Tsai Jung-Hui1, Lour Wen-Shiung2, Guo Der-Feng3, Liu Wen-Chau4, Wu Yi-Zhen1, Dai Ying-Feng1
1Department of Electronic Engineering, National Kaohsiung Normal University, 116, Ho-ping 1 st Road, Kaohsiung, Taiwan
2Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan
3Department of Electronic Engineering, Air Force Academy, Kaohsiung, Taiwan
4Institude of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan
Выставление онлайн: 20 июля 2010 г.
High-performance InP/GaAsSb double heterojunction bipolar transistor (DHBT) employing GaAsSb/InGaAs superlattice-base structure is demonstrated and compared with GaAsSb bulk-base structure by two-dimensional simulation analysis. The proposed device exhibits a higher current gain of 257 than the conventional InP/GaAsSb type-II DHBT with a lower current gain of 180, attributed to the tynneling behavior of minority carriers in the GaAsSb/InGaAs superlattice-base region under large forward base-emitter bias. In addition, a larger unity gain cutoff frequency of 19.1 GHz is botained for the superlattice-base device than that of 17.2 GHz for the bulk-base device.
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