Kinetics of light-induced degradation in a-Si : H films investigated by computer modeling
Meytin M.N.1, Zeman M.2, Budaguan B.G.1, Metselaar J.W.2
1Moscow Institute of Electronic Technology, Moscow, Russia
2Delft University of Technology, DIMES--ECTM, P.O. Box, GB Delft, The Netherlands
Поступила в редакцию: 4 октября 1999 г.
Выставление онлайн: 20 мая 2000 г.
In this work we investigated the stability of a-Si : H films under illumination and following recovery in dark at different temperatures. The a-Si : H films were fabricated with 55 kHz PECVD and with standard rf 13.56 MHz PECVD. We measured the steady-state photocurrent and the dark current after switchhing off the light source as a function of time. We observed photocurrent degradation and following recovery of the dark current. The kinetics of the photocurrent degradation as well as the dark current recovery demonstrated stretched-exponential behavior. The results of these straightforward measurements in combination with computer modeling were used to determine the effect of light-induced degradation and thermal recovery on the density of states distribution in the band gap of a-Si : H. We have found that the photocurrent degradation and the corresponding increase in the total defect concentration have different kinetics. The different kinetics were determined also for the dark current recovery and the corresponding decrease in the total defect concentration. The results point out that slow and fast types of defects in a-Si : H films control the kinetics of light-induced changes of the defect distribution in the band gap. A model is proposed that relates the origin of the fast and slow metastable defects with the distribution of Si-Si bond lengths.
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