Физика и техника полупроводников
Авторам
Вышедшие номера
- 2024
- 2023
- 2022
- 2021
- 2020
- 2019
- 2018
- 2017
- 2016
- 2015
- 2014
- 2013
- 2012
- 2011
- 2010
- 2009
- 2008
- 2007
- 2006
- 2005
- 2004
- 2003
- 2002
- 2001
- 2000
- 1999
- 1998
- 1997
- 1996
- 1995
- 1994
- 1993
- 1992
- 1991
- 1990
- 1989
- 1988
Single electron transistor: energy-level broadening effect and thermionic contribution
Выставление онлайн: 19 ноября 2017 г.
In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si-QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy-level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I-V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined. DOI: 10.21883/FTP.2017.12.45191.8239
- I.I. Abramov, E.G. Novik. Semiconductors, 35 (4), 474 (2001)
- I.I. Abramov, E.G. Novik. Semiconductors, 33 (11), 1254 (1999)
- I.I. Abramov, E.G. Novik. Semiconductors, 34 (8), 975 (2000)
- K.G. El Hajjam, M.A. Bounouar, N. Baboux, S. Ecoffey, M. Guilmain, E. Puyoo, L.A. Francis, A. Souifi, D. Drouin, F. Calmon. IEEE Trans. Electron Dev., 62 (9), 2998 (2015)
- S. Chatbouri, M. Troudi, N. Sghaier, A. Kalboussi, V. Aimez, D. Drouin, A. Souifi. Semiconductors, 50 (9), 1163 (2016)
- H.W.C. Postma. Science, 293 (5527), 76 (2001)
- J.A. Mol, C.S. Lau, W.J.M. Lewis, H. Sadeghi, C. Roche, A. Cnossen, J.H. Warner, C.J. Lambert, H.L. Anderson, G.A.D. Briggs. Nanoscale, 7 (31), 13181 (2015)
- M.L. Perrin, E. Burzuri, H.S.J. van der Zant. Chem. Soc. Rev., 44 (4), 902 (2015)
- T.T. Phuc. J. Phys. Conf. Ser., 187, 12055 (2009)
- K. Maeda, N. Okabayashi, S. Kano, S. Takeshita, D. Tanaka, M. Sakamoto, T. Teranishi, Y. Majima. ACS Nano, 6 (3), 2798 (2012)
- R.J. Schoelkopf. Science, 280 (5367), 1238 (1998)
- P.S.K. Karre, M. Acharya, W.R. Knudsen, P.L. Bergstrom. IEEE Sens. J., 8 (6), 797 (20080
- "compact-modeling-of-single-electron-memory- based-on-perceptron-designs-2169-0022- 1000187.pdf.crdownload"
- N.T. Bagraev, E.I. Chaikina, E.Y. Danilovskii, D.S. Gets, L.E. Klyachkin, T.V. L'vova, A.M. Malyarenko. Semiconductors, 50 (4), 466 (2016)
- M. Miralaie, M. Leilaeioun, K. Abbasian, J. Electron. Mater., 42 (1), 47 (2013)
- S. Mahapatra, V. Vaish, C. Wasshuber, K. Banerjee, A.M. Ionescu. IEEE Trans. Electron Dev., 51 (11), 1772 (2004)
- S.S. Dan, S. Mahapatra. IEEE Trans. Electron Dev., 56 (8), 1562 (2009)
- S.S. Dan, S. Mahapatra. IEEE Trans. Nanotechnol., 9 (1), 38 (2010)
- H. Grabert, M.H. Devoret. (Eds) Single Charge Tunneling (Boston, MA, Springer US, 1992) v. 294
- C. Wasshuber. Computational Single-Electronics (Viennam, Springer Vienna, 2001)
- S. Datta. Electronic Transport in Mesoscopic Systems (Cambridge, Cambridge University Press, 1995)
- S. Kano, K. Maeda, D. Tanaka, M. Sakamoto, T. Teranishi, Y. Majima. J. Appl. Phys., 118 (13), 134304 (2015)
- M. Chakraverty, R. Chakravarty, V. Babu, K. Gupta. Adv. Sci. Eng. Med., 8 (7), 552 (2016)
- K.G. El Hajjam, M.A. Bounouar, N. Baboux, S. Ecoffey, M. Guilmain, E. Puyoo, L.A. Francis, A. Souifi, D. Drouin, F. Calmon. IEEE Trans. Electron Dev., 62 (9), 2998 (2015)
- X. Wang, W. Porod. VLSI Des., 13 (1--4), 189 (2001)
- A. Boubaker, M. Troudi, N. Sghaier, A. Souifi, N. Baboux, A. Kalboussi. Microelectronics J., 40 (3), 543 (2009)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.
