Radiation degradation of Si ion detectors becomes critical for the experiments at new facilities giving the beam intensity increase up to 10⁵ times. The study is focused onthe impact of heavily damaged Bragg peak region (BPR) at the ion range end on the bulk current of Si sensors irradiated with 53.4 MeV ⁴⁰Ar ions in the fluence range (1-4)·10⁹ ion/cm². It is shown that taking into account only the generation current component is insufficient to explain the experimental I-V curves. Simulating I-V characteristics and the electric field profiles demonstrated arising of a built-in junction in the BPR, which controls hole diffusion at voltages below full depletion voltage. Contribution of this component to the total diode current enabled the agreement between experimental and simulated I-V curves. Keywords: silicon sensors, radiation degradation, current-voltage characteristic, carrier diffusion.

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Дата начала обработки статистических данных - 27 января 2016 г.