Spectroscopic parameters of LVM absorption bands of carbon and oxygen impurities in isotopic enriched silicon 28Si, 29Si and 30Si
Sennikov P.G.1, Kotereva T.V.1, Kurganov A.G.1, Andreev B.A.1, Niemann H.1, Schiel D.1, Emtsev V.V.1, Pohl H.-J.1
1Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhny Novgorod, Russia
Поступила в редакцию: 4 августа 2004 г.
Выставление онлайн: 17 февраля 2005 г.
The IR spectra of all three Si isotopes in the form of bulk single crystals (28Si with enrichment more as 99.9%, 29Si and 30Si with enrichment more than 90%) has been studied at T=300, 17 and 5 K in spectral range 550-1200 cm-1. IR active local vibrational modes (LVM) of the Si-12C centered at 605 cm-1 and of Si-16O-Si quasi-molecules in region of 1136 cm-1 for all Si isotopes in comparison with Si of natural isotopic composition as well as its isotopic shift at 300 and 17 K have been determined. The dependence of shape of antisymmetric stretching vibration band of 28Si-16O-28Si in spectrum of 28Si on spectral resolution has been studied. The perspectives of generalization of IR spectroscopy method for determination of carbon and oxygen impurities in Si of natural isotopic composition to mono-isotopic Si have been discussed.
- P. Wagner, J. Hage. Appl. Phys. A, 49, 123 (1989)
- S. Kashino, Y. Matsushita, M. Kanamori, T. Iisaka. Jap. J. Appl. Phys., 21 (1), (1982)
- H. Foll, B.O. Kolbesen. The Electrochemical Society Softbond Proceedings Series (Princeton, N. J., 1977) p. 565
- P. Becker, H. Bettin, L. Kolnders, A. Martin, A. Nicolaus, S. Koffer. PTB-Mitteilungen, 106, 321 (1996)
- B. Pajot. Analusis, 5 (7), 293 (1977)
- B.O. Kolbesen, T. Kladenovic. Kristall und Tecknic, 15 (1), K1--K3 (1980)
- DIN 50 438, Pt 1, p. 809 (Testing of Materials for Semiconductor Technology Determination of Impurity Content in Semiconductors by Infrared Absorption Oxygen in Silicon), (1993)
- ASTM F 1391-92, p. 646 (Standard Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption).
- Л.И. Хируненко, В.И. Шаховцов, В.И. Шинкаренко, Ф.М. Воробкало. ФТП, 24 (6), 1051 (1990)
- Г.Г. Девятых, А.Д. Буланов, А.В. Гусев и др. Докл. АН, 376 (4), 492 (2001).
- A.D. Bulanov, G.G. Devyatych, A.V. Gusev et al. Cryst. Res. Technol., 35 (9), 1023 (2000)
- K.M. Itoh, J. Kato, M. Uemura et al. Jap. J. Appl. Phys. (2003) in press
- K.M. Itoh, J. Kato, H. Yamada-Kaneta, H.-J. Pohl. Phys. Rev. B, 68, 035205 (2003)
- B. Pajot. In: Properties of Crystalline Silicon, ed. by B.L. Weiss. EMIS Datareviews Series, No 20, p. 492 (1998)
- A. Sassella. Appl. Phys., 79 (26), 4339 (2001)
- P. Wagner. Appl. Phys. A: Sol. Surf., 53, 20 (1991)
- O. De Gryse, P. Clauws. J. of Appl. Phys., 87 (7), 3294 (2000)
- T. Ruf, H.D. Fushs, M. Cardona. Phys. B1, 52 (11), 1115 (1996)
- M. Cardona. In: Festkorperprobleme / Advanced in Solid State Physics, ed. by R. Helbig, (Vieweg, Braunschweig / Wiesbaden), 34, 35 (1994)
- R.C. Newman. In: Infrared Studies of Crystal Defects (Tailor \& Francis, London, 1973) p. 88
- D.R. Bosomworth, W. Hayes, A.R.L. Spray, G.D. Watkins. Proc. Roy. Soc. (London), Ser. A 317, 133 (1970)
- B. Pajot, E. Artacho, C.A.J. Ammerlaan, J.-M. Spaeth. J. Phys.: Condens Matter, 7, 7077 (1995).
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.