Electrical properties of InP/InGaAs pnp heterostructure--emitter bipolar transistor
Tsai Jung-Hui1, Liu Wen-Chau2, Guo Der-Feng3, Kang Yu-Chi1, Chiu Shao-Yen4, Lour Wen-Shiung4
1Department of Electronic Engineering, National Kaohsiung Normal University, 116 Ho-ping 1 st Road, Kaohsiung 802, Taiwan
2Institude of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan
3Department of Electronic Engineering, Air Force Academy, Kaohsiung, Taiwan
4Department of Electrical Engineering, National Taiwan Ocean University, 2 Peining Road, Keelung, Taiwan
Выставление онлайн: 18 февраля 2008 г.
The dc performances of an InP/InGaAs pnp heterostructure-emitter bipolar transistor have been investigated by theoretical analysis and experimental results. Though the valence band discontinuity at InP/InGaAs heterojunction is relatively large, the addition of a heavy-doped as well as thin p+-InGaAs emitter layer between p-InP confinement and n+-InGaAs base layers effectively eliminates the potential spike at emitter-base junction, lowers the emitter-collector offset voltage, and increases the potential barrier for electrons, simultaneously. Experimentally, a high current gain of 88 and a low offset voltage of 54 mV have been achieved. PACS: 85.30.Pq, 73.40.Kp
- Y. Baeyens, C. Dorschky, N. Weimann, Q. Lee, R. Kopf, G. Georgiou, J.P. Mattia, R. Hamm, Y.K. Chen. IEEE Trans. Microwave Theory and Techniques, 48, 2403 (2000)
- H. Asahi, K. Konishi, O. Maeda, A. Ayabe, H.J. Lee, A. Mizobata, K. Asami, S. Gonda. J. Cryst. Growth, 227--228, 307 (2001)
- K. Yang, J.C. Cowles, J.R. East, G.I. Haddad. IEEE Trans. Electron., Dev., 42, 1047 (1995)
- J.H. Tsai. Appl. Phys. Lett., 83, 2695 (2003)
- K.W. Kobayashi, D.K. Umemoto, J.R. Velebir, jr., A.K. Oki, D.C. Streit. IEEE J. Sol. St. Circuits, 28, 1011 (1993)
- S. Donald, D. Pavlidis. Sol. St. Electron., 43, 1507 (1999)
- S.C. Lee, J.N. Kau, H.H. Lin. Appl. Phys. Lett., 45, 1114 (1984)
- J.J. Huang, M. Hattendorf, M. Feng, D.J.H. Lambert, B.S. Shelton, M.M. Wong, U. Chowdhury, T.G. Zhu, H.K. Kwon, R.D. Dupuis. IEEE Electron. Dev. Lett., 22, 157 (2001)
- J.J. Liou, C.S. Ho, L.L. Liou, C.I. Huang. Sol. St. Electron., 36, 819 (1993)
- H.R. Chen, C.Y. Chang, C.P. Lee, C.H. Huang, J.S. Tsang, K.L. Tsai. IEEE Electron. Lett., 15, 336 (1994)
- J.H. Tsai, S.Y. Cheng, L.W. Laih, W.C. Liu, H.H. Lin. Superlat. Microstruct., 23, 1297 (1998)
- J.H. Tsai, K.P. Zhu, Y.C. Chu, S.Y. Chiu. Mater. Chem. Phys., 87, 435 (2004)
- L.M. Lunardi, S. Chandrasekhar, R.A. Hamm. IEEE Electron. Dev. Lett., 14, 19 (1993)
- D. Cui, S. Hsu, D. Pavlidis. IEEE Int. Conf. on Indium Phosphide and Related Mater., N 224 (2001)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.
© 2024 Физико-технический институт им. А.Ф. Иоффе Российской академии наук