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Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT
Lenka T.R.1, Panda A.K.1
1National Institute of Science & Technology, Palur Hills, Berhampu, Odisha, India
Поступила в редакцию: 11 февраля 2011 г.
Выставление онлайн: 20 августа 2011 г.
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A new AlGaN/GaN-based high electron mobility transistor (HEMT) is proposed and its microwave characteristics are discussed by introducing a nanoscale AlN or InN layer to study the potential improvement in their high frequency performance. The 2DEG transport mechanism including various subband calculations for both (Al,In)N-based HEMTs are also discussed in the paper. Apart from direct current characteristics of the proposed HEMT, various microwave parameters such as transconductance, unit current gain (h21=1) cut-off frequency (ft), high power-gain frequency (fmax). Masons available/stable gain and masons unilateral gain are also discussed for both devices to understand its suitable deployment in microwave frequency range.
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